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 tm FFPF04S60S 4 A, 600 V, STEALTH? II Diode ?2007 Fairchild Semiconductor Corporation FFPF04S60S Rev. A www.fairchildsemi.com 1 FFPF04S60S Features ? Stealth Recovery trr = 25 ns (@ IF = 4 A) ? Max Forward Voltage, VF = 2.6 V (@ T C = 25°C) ? 600 V Reverse Voltage and High Reliability Applications ? General Purpose ? Switching Mode Power Supply ? Boost Diode in Continuous Mode Power Factor Corrections ? Power Switching Circuits 4 A, 600 V, STEALTH? II Diode The FFPF04S60S is a STEALTH? II diode with soft recovery characteristics. It is silic on nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Absolute Maximum Ratings TC = 25oC unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Rating Unit VRRM Peak Repetitive Reverse Voltage 600 V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current @ T C = 116 oC 4 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 40 A TJ, TSTG Operating and Storage Temperature Range -65 to +150 oC Symbol Parameter Rating Unit RθJC Maximum Thermal Resistance, Junction to Case 6.8 oC/W Device Marking Device Package Reel Size Tape Width Quantity F04S60S FFPF04S60STU TO-220F-2L - - 50 1. Cathode 2. Anode 1. Cathode 2. Anode TO-220F-2L October 200 7 ? Avalanche Energy Rated ? RoHS Compliant |